Semiconductor-Grade Silicon Carbide – Powering the Future
Electronic-grade silicon carbide (6H/4H polytypes) sets new benchmarks with: Resistivity: >1x10⁵ Ω·cm, Micropipe density: <1 cm⁻²
Surface roughness: Ra ≤0.2nm (EPI-ready) Our 150mm N-type wafers (4° off-axis) enable 3.3kV SiC MOSFET production with 99.7% yield rates, critical for EV charging infrastructure.
Modified Applications
Doped SiC: Aluminum (5x10¹⁸ atoms/cm³) for Ohmic contacts
SiC Epitaxial substrates: 10-100μm thickness with ≤5% thickness variation
Quantum-grade SiC: NV center density >500/mm³ for quantum sensing
Silicon carbide parameters
|
Trademark |
ZhenAn |
|
Product |
Silicon Carbide |
|
Purity |
88% 90% 98% |
|
Shape |
Grit and Powder |
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HS Code |
284920 |
Quality Leadership
Operating Class 100 cleanrooms (ISO 14644-1), we implement VDA 6.3 process controls and SEMI S2/S8 compliance. Partnering with Fraunhofer Institute, we've developed proprietary defect mapping technology achieving 0.02ppb metallic contamination levels. Our wafer shipment kits feature nitrogen-sealed cassettes with real-time humidity tracking.
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