the properties of silicon carbide
Silicon carbide (SiC) is a semiconductor material with excellent properties. It has a high hardness (3000 kg/mm² of K-hardness), second only to diamond, so it can be used to cut hard materials such as rubies1. The thermal conductivity of silicon carbide exceeds that of copper metal, which is 3 times that of silicon (Si) and 8~10 times that of gallium arsenide (GaAs), which is essential for heat dissipation of high-power devices1. In addition, silicon carbide is chemically stable and resistant to almost any known corrosive agent at room temperature1. These properties of silicon carbide make it have a wide range of application prospects in harsh environments such as high temperature, high pressure, high frequency and high power.
Hardness: Silicon carbide has an extremely high hardness, about 80% of that of diamond, which makes it important for abrasives and wear-resistant materials.
High-temperature resistance: Silicon carbide exhibits excellent high-temperature stability and can operate stably at temperatures up to 2700°C for extended periods, making it suitable for various applications in high-temperature environments.
Thermal conductivity: Silicon carbide has a high thermal conductivity, which helps in the efficient transfer of heat. This is important in heat exchangers and other applications requiring efficient heat transfer.
Preparation method of silicon carbide
Silicon carbide is usually produced by smelting quartz sand, petroleum coke (or coal coke), wood chips (salt needs to be added when producing green silicon carbide) and other raw materials in a resistance furnace at high temperature. In industrial production, silicon carbide is divided into black silicon carbide and green silicon carbide, both of which are hexagonal crystals with a density of 3.20 ~ 3.25.
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