High Level Material Silicon Metal 551

Hydrofluoric acid and nitric acid are used to directly dissolve the sample in the PTFE volumetric flask to avoid the loss of element volatilization to the greatest extent. Inductively coupled plasma emission spectrometer for the determination of the impurity element boron in silicon metal 551. The interference element correction program IEC is used to replace the matrix matching method to eliminate the element interference, which is convenient and fast and more operable. The results showed that the recoveries were 96%~104% and the relative standard deviation (RSD) (n=11) was 2.09%.

1.A method for removing boron from slag pickling of silicon metal 551. It involves a purification method for polysilicon, and provides a slag pickling method for boron removal of silicon metal. The slag-making agent is pre-melted and loaded into the feeding bin, the silicon metal is loaded into the melting crucible, and the argon gas is filled after vacuuming; The molten silicon metal material is heated, and the pre-melted slag making agent is added to the melted liquid silicon metal material; After the reaction, the liquid metal silicon material is poured into the mold, cooled to obtain silicon ingots, the obtained silicon ingots are crushed, grinded, and sieved to obtain silicon powder, and the obtained silicon powder is soaked in ethanol to remove oil, and then cleaned with water; The obtained silica powder is soaked and washed at least once with hydrochloric acid solution, sulfuric acid and nitric acid mixture, hydrofluoric acid mixture, and hydrochloric acid solution, and the pickled silica powder is then rinsed with clean water to obtain silicon metal after boron removal. The boron removal efficiency is high, which can be as high as more than 96%. The boron content in silicon metal is reduced from 8ppmw to less than 0.3ppmw to meet the requirements of solar-grade polysilicon.

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