High Level Material Silicon Metal 2502

A material and preparation method with a metal silicide, a silicon metal 2502 nanostructure, which comprises a metal silicide nanostructure fabricated on an SOI substrate; The thickness of the insulating dielectric layer of this SOI substrate is 100-1000 nm, and the thickness of the silicon film is 50-500 nm. The preparation method includes cleaning, drying, spin coating positive photoresist, exposure, development and fixing, and then fabricating the mask pattern structure of the required nanostructure on the silicon thin film surface of the SOI substrate.

1.a material and preparation method with a metal silicide, a silicon metal 2502 nanostructure, which comprises a metal silicide nanostructure fabricated on an SOI substrate; The thickness of the insulating dielectric layer of this SOI substrate is 100-1000 nm, and the thickness of the silicon film is 50-500 nm. The preparation method comprises that the SOI substrate is cleaned, dried, spin-coated with positive photoresist, exposed, developed and fixed, and the mask pattern structure of the required nanostructure is fabricated on the silicon thin film surface of the SOI substrate. Reactive ion etching is used to etch the silicon film on the SOI substrate into the required nanostructure, the depth of etching is the thickness of the silicon film, and then on the insulating layer containing the silicon nanostructure, the metal film required for the formation of metal silicide is deposited, and then the metal and silicon react in solid phase by high-temperature annealing to form metal silicide, and the unreacted metal is removed by chemical corrosion, that is, the metal silicide nanostructure is formed. The method is simple and can control the position and scale of the nanostructure.

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