High Level Material Silicon Metal

High Level Material Silicon Metal

An ICP-AES method for the determination of 14 impurity elements such as B, Fe, Al, Ca, Mn and so on in silicon metal.
Description

Products Description

 

A fast-solidifying metal silicide metallurgical coating with silicon metal Cr3Si as the reinforcing phase and complex polymetal silicide Cr2 Ni3Si as the matrix was prepared on the surface of 1Cr18Ni9Ti stainless steel by laser deposition technology using Cr-Si-Ni prealloyed powder as raw material, and its wear resistance was evaluated under sliding wear conditions, and the electrochemical corrosion resistance of the coating in 0 .5 mol/L H2 SO4 and 3.5 % Na Cl solution was evaluated by anodic polarization method.

 

Products parameters

Garde Composition
Si Content (%) Impurities (%)
Fe Al Ca P
Silicon Metal 1501 99.69 0.15 0.15 0.01 ≤0.004%
Silicon Metal 1502 99.68 0.15 0.15 0.02 ≤0.004%
Silicon Metal 1101 99.79 0.1 0.1 0.01 ≤0.004%
Silicon Metal 2202 99.58 0.2 0.2 0.02 ≤0.004%
Silicon Metal 2502 99.48 0.25 0.25 0.02 ≤0.004%
Silicon Metal 3333 99.37 0.3 0.3 0.03 ≤0.005%
Silicon Metal 411 99.4 0.4 0.1 0.1 ≤0.005%
Silicon Metal 421 99.3 0.4 0.2 0.1 --
Silicon Metal 441 99.1 0.4 0.4 0.1 --
Silicon Metal 551 98.9 0.5 0.5 0.1 --
Silicon Metal 553 98.7 0.5 0.5

0.3

--
Off-Grade Silicon Metal 96 2 1 1 --

 

Products cooperation picture

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1.After the matrix was removed by HF volatilization, 23 impurity elements such as Fe, Al, Ti, Ca, Cu, As, and Pb were quantitatively determined by inductively coupled plasma spectroscopy (ICP-AES) at the same time, and the content of the matrix element silicon metal was calculated by differential subtraction method. The influence of interference between coexisting elements was tested, the elemental analysis lines and instrument working parameters were optimized, and the synchronous background correction method and K-coefficient method were used to eliminate the influence of the interference between coexisting elements and the physicochemical factors of atomized injection of the test solution. The method is simple and fast, easy to operate and master, and satisfactory results have been obtained in determining the recovery, precision and detection limit.

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