Classification by Primary Components
(1) Silicon-Dominant Alloys (Si > 70%)
Composition: High silicon content (70-90%) with carbon (10-30%) and minor impurities (Fe, Al, Ca).
Structure: Contains free silicon crystals embedded in a carbon matrix.
Applications:
Steelmaking deoxidizers (replacing ferrosilicon)
Aluminum alloy modifiers
Precursor for high-purity silicon production
(2) Carbon-Dominant Alloys (C > 50%)
Composition: High carbon content with 20-40% silicon.
Structure: Graphite or amorphous carbon matrix with dispersed Si or SiC particles.
Applications:
Refractory materials (furnace linings)
Conductive additives (batteries, electrodes)
Foundry carburizers
(3) Silicon Carbide (SiC) Based Alloys
Composition: Nearly stoichiometric SiC (70% Si, 30% C).
Structure: Covalently bonded SiC crystals (α-SiC or β-SiC polytypes).
Applications:
Abrasives and cutting tools
High-temperature semiconductors
Armor ceramics
Commercial Grades Comparison
| Type | Si Content | C Content | Key Feature | Primary Use |
|---|---|---|---|---|
| Metallurgical SiC | 65-70% | 30-35% | High toughness | Steel additives |
| Battery-grade Si-C | 40-60% | 40-60% | Nano-porous | Li-ion anodes |
| Refractory SiC | 30% | 70% | Thermal shock resistant | Furnace parts |
| Electronic-grade SiC | 50% | 50% | High purity | Power devices |
Special Functional Varieties
(1) Porous Si-C Alloys
Features: High surface area (50-500 m²/g).
Uses: Gas adsorption, catalyst supports.
(2) Gradient Si-C Alloys
Features: Composition varies gradually across structure.
Uses: Thermal barrier coatings, graded electrodes.
(3) Single-Crystal SiC
Growth Methods: Modified Lely, HTCVD.
Grades: 4H-SiC, 6H-SiC for power electronics.
Key Properties: Wide bandgap (3.2 eV), high breakdown voltage.
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