Ferrosilicon Nitride Powder

Ferrosilicon Nitride Powder

Application prospects of ferrosilicon nitride powder: At present, the speed and integration density of semiconductor circuits are gradually increasing, and therefore the size of semiconductor chips is gradually increasing.
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Description
ferrosilicon nitride powder Made In China

 

 

ferrosilicon nitride powder Parameters

 

N Si Fe O bulk density
≤ ≥
28-31 47-52 12-17 2 3.6
1. The products are suitable for stainless steel smelting, special alloy smelting, special refractory materials, the Arms industry, the electronic industry, the casting industry, etc

2. Components and particle size can be adjusted according to user needs

 

Specification granularity: natural block, 10-100mm, 10-60mm, 3-10mm, 1-3mm, 0-1mm, or customized according to customer requirements.

 

Packaging: Ton bag packaging (1000kg/bag) or customized according to customer requirements.

 

Ferro silicon nitride powder knowledge

  

Application prospects of ferrosilicon nitride powder: At present, the speed and integration density of semiconductor circuits are gradually increasing, and therefore the size of semiconductor chips is gradually increasing. In addition, to provide multi-layer interconnect structures, the width of interconnects is gradually miniaturized and the wafer diameter becomes larger.

 

However, as the integration density of devices increases and the minimum line width decreases, limitations that cannot be overcome using local planarization according to related techniques are encountered. To improve processing efficiency or quality, ferrosilicon nitride powder uses chemical mechanical polishing (CMP, chemical mechanical planarization) to perform global planarization of the wafer. Global planarization using CMP is a necessary part of existing wafer processing.

 

Specific applications of ferrosilicon nitride powder: Polishing fluids used for CMP treatment contain abrasive particles such as silica, aluminum oxide, or cerium oxide, and CMP treatment is broadly classified into oxide CMP and Metal CMP. Polishing slurries for oxide CMP generally have a pH of 10-12, and polishing slurries for metal CMP have an acidic pH of 4 or less. Conventional CMP pad adjusters include electroplated CMP pad adjusters manufactured by electroplating processing and melting type CMP pad adjusters manufactured by melting CMP pad adjusters and ferrosilicon nitride powder at high temperatures.

 

However, these conventional plating type and melting type CMP pad conditioners have problems in the following aspects. When they are used for in-situ adjustment in metal CMP processing, the diamond particles attached to the surface of the CMP pad conditioner are affected by the use of CMP slurry. The polishing action of the polishing particles and acidic solution causes surface erosion and becomes detached from the surface. Furthermore, the substrate may preferably be made of a ceramic material such as ferrosilicon nitride powder (Si3N4) or silicon (Si). Other examples of materials from the substrate 10 include aluminum oxide (A1203), aluminum nitride (AlN), titanium oxide (TiO2), zircon oxide (ZrOx), and silicon dioxide (SiO2).

 

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