High Quality Silicon Carbide/Emery

Silicon carbide process flow: Ultra-high temperature environment: Heating to more than 2500℃ through plasma or arc to achieve instantaneous reaction. Rapid synthesis: The reaction time is shortened to several hours, and high-purity SiC is directly generated.

Advantages: The product has high purity (＞99.9%) and excellent crystal structure.

There are no intermediate products, which is suitable for the preparation of nano-scale SiC. Disadvantages: Expensive equipment and extremely high energy consumption. The technology is difficult and difficult to apply on a large scale. Application: High-end fields such as semiconductors and optical coatings. Other processes: Chemical vapor deposition (CVD): used for thin film or single crystal SiC, the cost is extremely high. Sol-gel method: suitable for small batches of nano-SiC in the laboratory, and industrialization is difficult.

A: Buyer send enquiry →get silicon carbide quotation → order confirmation→ Buyer arrange 30% deposit → Production started upon receipt of deposit→ Strict inspection during production → Buyer arrange balance payment→ Packing → Delivery as per trade terms

Hot Tags: high quality silicon carbide/emery, China high quality silicon carbide/emery manufacturers, suppliers, factory