Metallurgy Siliziumkarbid Silicon Carbide 90

The structure of silicon carbide is fascinating. The basic unit of its crystal structure is the silicon-carbon tetrahedron, where the silicon atom is at the center and surrounded by carbon atoms. In the crystal, silicon accounts for about 70% and carbon about 30%. Covalent bonds are the main bonding type in SiC, accounting for 88% of the total bonds. The strong covalent bonds and the sp3 hybridization formed during the bonding of carbon and silicon atoms result in a very stable structure similar to that of diamond. Different stacking orders of carbon-silicon layers, either parallel or anti-parallel, lead to the formation of multiple crystal forms of SiC.

In terms of synthesis, apart from the previously mentioned carbon reduction of silica and chemical vapor deposition methods, there is also the direct synthesis of carbon and silicon. In this approach, silicon and carbon are made to react directly under certain conditions to form SiC. Additionally, in the industrial production of SiC, the Acheson method is widely used. In this method, a resistance furnace made of refractory bricks is used. A mixture of silica sand and coke powder is arranged around a carbon conductor. When an electric current passes through the conductor, a chemical reaction occurs, combining the carbon in the coke and the silicon in the sand to form SiC and carbon monoxide gas. However, this method has some drawbacks, such as generating dust and waste gases like carbon monoxide, sulfur dioxide, and hydrogen sulfide, which cause environmental pollution. To address this, the ESK method was developed. It uses a bottom plate electrode, and the waste gases generated during smelting can be collected through a gas collection pipe and used for power generation, achieving both waste gas treatment and 20% energy recovery.

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