Silicon carbide single crystal production process
Silicon carbide (SiC) is an important semiconductor material with excellent thermodynamic and electrical properties. It is widely used in power electronic devices, optoelectronic devices, sensors and other fields. Silicon carbide single crystal is one of the most widely used forms of silicon carbide materials. Its preparation process is relatively complex, mainly including raw material preparation, crystal growth and wafer processing.
Silicon carbide single crystal material mainly uses high-purity Si℃ powder as raw material to grow single crystals by thermodynamic methods. First, it is necessary to select suitable silicon carbide powder as raw material. The purity and particle size of the powder have an important influence on the quality of the final crystal. In general, high-purity silicon carbide powder with a powder diameter in the range of 1-5um is selected and preheated to remove impurities on the surface of the powder. At the same time, it is also necessary to prepare an appropriate amount of solvent and flux to promote the growth of silicon carbide crystals.
Products Description
|
Product name |
Silicon Carbide |
| Linear Expansivity |
1.5-2 |
| Hardness | Conventional Abrasive |
| Specification | Accroding to customer′s request |

Logo & Shipment
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Yes, you can send us your design and we can make your LOGO.
Q: Can you arrange the shipment?
Sure, we have permanent freight forwarder who can gain the best price from most ship company and offer professional service.
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