High Level Metal Silicon Metal 551

A method for manufacturing a semiconductor device, the semiconductor device comprises a semiconductor body with a surface, the surface is adjacent to the silicon region and the insulating material area, each silicon region is provided with a top layer of silicon metal 551, the metal is deposited on the surface of the semiconductor body, and then the semiconductor body is heated to the temperature of forming metal silicide in the deposition process. What is deposited is cobalt and nickel, and then the semiconductor body is heated to a temperature where cobalt or nickel silicide is formed. In order to avoid the growth of metal silicides in each part of the insulating material area adjacent to each silicon zone.

1.In order to reduce the difficulty of the follow-up process of silicon metal 551 pickling, the silicon metal was purified on the basis of the mature room temperature pickling technology and the new wet oxygen oxidation technology. The main function of pickling is to remove most of the metal impurities exposed on the surface of silicon metal particles; After the oxidation of wet oxygen, the boron with a small coagulation coefficient (coagulation coefficient in silicon and silica systems) in the particles diffuses into the silica at high temperature, and then corrodes to remove the oxide layer and the impurities in it. Experiments show that the method has obvious purification effect on boron impurities, and the content of boron impurities is as low as 4×10-6.

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