High Level Metal Silicon Metal 97

Simultaneous determination of trace and trace impurity elements Al, Ca, Fe, Mn, P, Cr, Cu, Ni, Ti, V, Zr, As and B inductively coupled plasma atomic emission spectroscopy (ICP-AES) in silicon metal 97. A silicon metal standard sample, NIST SRM-57a, was determined with satisfactory results for the determination of silicon metal samples under optimized instrument conditions and assay media. The recoveries of trace and trace impurities in silicon metal samples were between 95%~105%, and the relative standard deviation RSD was less than 5%, which was easy to operate, fast to analyze, and accurate and reliable results.

1.In the microsensor system, the multi-layer fusible silicon metal 97 interconnection process is used to overcome the fact that when the microsensor and the IC chip are monolithically integrated, the aluminum connection cannot withstand the annealing high temperature required in the manufacturing process of the microsensor, and the interconnection structure can be processed on the standard CMOS process line, which reduces the manufacturing cost. After tape-out, the interconnect structure has the characteristics of strong step coverage, good thermal stability, low resistivity, and easy dry etching, which can meet the requirements of large-scale IC multi-layer interconnect. The large-scale digital-analog hybrid integrated circuit composed of it retains its performance after the annealing conditions are 500°C5, h, 600°C, 30 min, 650°C5, and min, respectively. The above annealing conditions meet the requirements of monolithic integration of microsensor systems based on ferroelectric thin films.

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