High Level Silicon Metal 2202

The contact systems between transition metal and silicon have been attracting attention because of their importance in the formation of Schottky barriers, the epitaxial growth of transition silicon metal 2202, the stability and high temperature resistance of the fabrication device. Therefore, the formation of metal silicide films on silicon substrates is also widely used in the semiconductor industry. The Cr, Fe and Mn films evaporated on the silicon substrate were heat-treated, and the transition metal silicide films were prepared by solid-phase reaction (SPR), that is, various temperature tests were carried out on the transition metal silicide (thin film)/Si system.

1.Refractory silicon metal 2202 has high melting point, high strength, low density and good high temperature oxidation resistance, which is a very promising high-temperature structural material, but its high room temperature brittleness hinders its industrial application. The high room temperature brittleness and low high temperature strength of high-temperature intermetallic compounds can be effectively improved through alloying and compounding, as well as advanced material preparation techniques. Based on the concept of in-situ synthesis of composite materials, three metal silicide complex alloys, Cu-Mo-Si, Co-Mo-Si and Ni-Mo-Si, were designed, and the complex phase alloy materials with metal solid solution dispersed in the metal silicide matrix were synthesized by in-situ reaction using industrial pure Cu, Co, Ni, Mo and Si element powders as raw materials. By XRD, OM...

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