High Level Material Silicon Nitride

Under remote conditions, silicon powder can be completely nitrided in the SHS process to generate silicon nitride, and the product has high nitrogen content and low oxygen content, but it is β phase. In the silicon fume SHS reaction, an appropriate amount of Si_3N_4 seed must be added; The propagation velocity of the SHS combustion wave of silicon increases with the increase of nitrogen pressure and the decrease of reactant filling density, but it is independent of the reactant composition and sample diameter. The combustion wave temperature increased with the increase of nitrogen pressure and the increase of sample diameter, which was independent of the composition of reactants and filling density.

1.Silicon nitride films were prepared by using plasma chemical vapor deposition (PECVD) technology under different deposition conditions (substrate temperature range of 20~180°C and RF power of 10~30W), and the effects of deposition conditions on the properties and waterproof properties of silicon nitride films were studied. The experimental results show that with the increase of substrate temperature, the density, refractive index and Si/N ratio of silicon nitride films increase correspondingly, while the deposition rate and H content decrease correspondingly. With the increase of RF power, the deposition rate, density, refractive index and Si/N ratio of silicon nitride films increase correspondingly, while the H content decreases correspondingly. The water vapor permeation experiment shows that even if the substrate temperature is reduced to 50°C, the deposited silicon nitride film still has good waterproof performance. Experimental results show that low-temperature silicon nitride films can be effectively applied to the packaging of organic light-emitting devices (OLEDs).

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