One Of The High Level Metals Silicon Carbide

With the wide application of silicon carbide metal oxide semiconductor field effect transistor (MOSFET) power devices, the gate reliability problems faced by them need to be solved urgently, this paper reviews the gate structure of planar gate SiC vertical MOSFET power devices and the gate oxygen screening methods commonly used in the industry, introduces the physical models of gate oxygen early failure, and discusses the applicability between these physical models and screening methods.

1.Carbon/silicon carbide is a new type of high-performance ceramic-based friction resistance material developed in recent years, which has a series of advantages such as low density, good oxidation resistance, high friction performance and stable performance, and has a wide range of application prospects in the field of high-energy load braking such as high-speed trains, aircraft and heavy vehicles. Reactive melt impregnation is an effective way to prepare carbon/silicon carbide friction composites. Based on the design of carbon/silicon carbide friction composites, the thermodynamic conditions of the reactive melt penetration process, the basic characteristics and kinetic laws of the Si-C reaction system are analyzed in depth. In this paper, the microstructure characteristics and friction and wear properties of two typical C/SiC composites, such as short fiber molding and three-dimensional needling, are systematically discussed. At the same time, the application of advanced engineering detection methods such as infrared thermal imaging, X-ray transmission and industrial CT in carbon/silicon carbide friction composite components is analyzed.

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