High Level Product Silicon Carbide

TMAH can significantly increase the zeta potential of silicon carbide powder and reduce the viscosity of the slurry, thereby significantly optimizing the rheological properties of the slurry. At pH about 10, the zeta potential increased by 11.7 mV and 21 mV, respectively, after adding 0.3% and 0.6% TMAH. Excessive dispersant will increase the ion concentration in the slurry and lead to a decrease in the thickness of the electric double layer, thus worsening the rheology of the slurry.

1.A method for preparing silicon-modified thin films on reactive sintered silicon carbide (RB-SiC) materials by using a Hall-type ion source to assist electron beam evaporation, and the polishing effect of the modified films at different deposition rates was studied. Surface scattering and reflection measurements were carried out on the samples. The micrographs of the samples show that the structure of the silicon film layer tends to be loose under the condition of increasing deposition rate. After finely polishing the reactive sintering of silicon carbide samples coated with silicon-modified films, the surface scattering coefficient decreases to 1.46%, and the reflectivity is close to that of well-polished glass-ceramic. The temperature shock test and surface tensile test show that the silicon film has no cracking and falling off, is stable in nature, and has good combination with silicon carbide substrate.

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