Products Parameters
| Range Of Grit Sizes | Chemical Composition(% By Weight) | |||
| SIC% | F.C% | Fe2O3% | Density(g/cm3) | |
| SIC98% | ≥98.5 | ≤0.2 | ≤0.4 | ≥3.4 |
| SIC97% | ≥97.5 | ≤0.3 | ≤0.5 | ≥3.3 |
| SIC90% | ≥90 | ≤2.5 | ≤2.0 | ≥3.15 |
| SIC88% | ≥88 | ≤3.0 | ≤2.0 | ≥3.15 |
Products Description
Silicon carbide (SiC) is an inorganic non-metallic material with many excellent physical and chemical properties. It is widely used in many fields. There are two commonly used basic varieties of silicon carbide: black silicon carbide and green silicon carbide, both of which belong to α-SiC. In addition, there are varieties such as cubic silicon carbide. Silicon carbide has a high hardness, with a Mohs hardness of 9.5, and has excellent wear resistance. Silicon carbide has stable chemical properties, high thermal conductivity, low thermal expansion coefficient, and can resist oxidation at high temperatures. Silicon carbide is a semiconductor material with electrical conductivity. Silicon carbide also has the characteristics of corrosion resistance and high strength.
There are many methods for preparing silicon carbide. According to the material state of the initial raw materials, they can be roughly divided into three methods: solid phase method, liquid phase method and gas phase method. The solid phase method includes carbon thermal reduction method, mechanical crushing method and self-propagating high temperature synthesis (SHS) method. Among them, the carbon thermal reduction method is the most commonly used method. The raw materials are quartz sand and petroleum coke, which react at high temperature to produce silicon carbide. The liquid phase method includes sol-gel method and thermal decomposition method. The sol-gel method prepares silicon carbide micropowder through hydrolysis, polymerization and other reactions; the thermal decomposition method is to prepare silicon carbide powder by heating the precursor to undergo decomposition reaction. The gas phase method includes chemical vapor deposition (CVD), laser induced deposition (LICVD) and plasma deposition (PICVD). The gas phase method can produce high-quality silicon carbide micropowder, but the cost is high and the output is low.
Silicon carbide has shown wide application potential in many fields due to its unique physical and chemical properties. Power devices made of silicon carbide materials have the characteristics of high withstand voltage, low on-resistance and high frequency, and are suitable for electric vehicles, solar inverters, high-speed railway traction drives and other fields. In the fields of 5G communications, radar, satellite communications, etc., silicon carbide materials are used to manufacture high-performance RF devices due to their high-frequency characteristics. Silicon carbide-based LEDs have higher luminous efficiency and longer service life, and are suitable for indoor and outdoor lighting, display screens, etc. Silicon carbide ceramic materials are used to manufacture high-temperature components of aerospace vehicles due to their high temperature resistance and high strength. Silicon carbide materials are used to manufacture substrates for solar cells to improve battery efficiency.
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