High Level Product Silicon Nitride

Partially crystallized silicon mosaic microstructures found in silicon nitride films prepared by LPCVD. Depending on the growing conditions and process, the scale of the structure ranges from tens to hundreds of nanometers. Based on the stress test results and transmission electron microscopy observation results of SiNx films grown under different conditions, the genesis of the microstructure of silicon-rich SiNx films and their interaction with the stress in the film were analyzed, and the LPCVD growth process of silicon-rich SiNx films was optimized, which greatly reduced the tensile stress of the film, and the unsupported film-forming area could reach 40mm×40mm. Based on the results of this study, the controlled growth of SiNx membranes with determined tensile stress was realized by LPCVD.

1.Silicon nitride thin films (SiN_x) were prepared by low pressure chemical vapor deposition (LPCVD) technology using silane and ammonia as silicon and nitrogen sources, respectively, and high-purity nitrogen as carrier gas. The growth kinetics of the SiN_x films were studied by ellipsometry, the properties of the SiN_x films were characterized by Fourier infrared spectroscopy and X-ray photoelectron spectroscopy, and the microscopic morphology of the SiN_x films was observed by atomic force microscopy. Under the same conditions of other processes, the growth rate of the SiN_x film increases monotonically with the increase of working pressure, and the ratio (R) of the flow rate of ammonia to silane in the feed gas has an opposite effect on the growth rate of the film. As the reaction temperature increases, the deposition rate increases gradually, reaching a maximum around 840 °C and then rapidly decreasing. When R2 is used, a Si-rich SiN_x thin film (x1.33) is obtained. When R4 is used, a SiN_x film with near-stoichiometric (z≈1.33) is obtained.

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